2n3740 2n3741 maximum ratings: (t c =25c) symbol 2n3740a 2n3741a units collector-base voltage v cbo 60 80 v collector-emitter voltage v ceo 60 80 v emitter-base voltage v ebo 7.0 v continuous collector current i c 4.0 a peak collector current i cm 10 a continuous base current i b 2.0 a power dissipation p d 25 w operating and storage junction temperature t j , t stg -65 to +200 c electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i cev v ce =rated v ceo , v be =1.5v (2n3740, 2n3741) 100 a i cev v ce =rated v ceo , v be =1.5v (2n3740a, 2n3741a) 100 na i cev v ce =40v, v be =1.5v, t c =150c (2n3740) 1.0 ma i cev v ce =40v, v be =1.5v, t c =150c (2n3740a) 0.5 ma i cev v ce =60v, v be =1.5v, t c =150c (2n3741) 1.0 ma i cev v ce =60v, v be =1.5v, t c =150c (2n3741a) 0.5 ma i cbo v cb =rated v cbo (2n3740, 2n3741) 100 a i cbo v cb =rated v cbo (2n3740a, 2n3741a) 100 na i ceo v ce =40v (2n3740) 1.0 ma i ceo v ce =40v (2n3740a) 1.0 a i ceo v ce =60v (2n3741) 1.0 ma i ceo v ce =60v (2n3741a) 1.0 a i ebo v eb =7.0v (2n3740, 2n3741) 0.5 ma i ebo v eb =7.0v (2n3740a, 2n3741a) 100 na bv ceo i c =100ma (2n3740, 2n3740a) 60 v bv ceo i c =100ma (2n3741, 2n3741a) 80 v v ce(sat) i c =1.0a, i b =125ma 0.6 v v be(on) v ce =1.0v, i c =250ma 1.0 v h fe v ce =1.0v, i c =100ma 40 h fe v ce =1.0v, i c =250ma 30 200 h fe v ce =1.0v, i c =500ma 20 h fe v ce =1.0v, i c =1.0a 10 h fe v ce =10v, i c =50ma, f=1.0khz 25 f t v ce =10v, i c =100ma, f=1.0mhz 4.0 mhz c ob v cb =10v, i e =0, f=100khz 100 pf 2n3740 2n3740a 2n3741 2n3741a pnp silicon power transistor description: the central semiconductor 2n3740 series types are pnp silicon power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. marking: full part number to-66 case r1 (9-september 2011) www.centralsemi.com
2n3740 2n3740a 2n3741 2n3741a pnp silicon power transistor to-66 case - mechanical outline marking: full part number www.centralsemi.com r1 (9-september 2011)
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